| PART |
Description |
Maker |
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PEMH9 PIMH9 PUMH9 PUMH9125 |
NPN-NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=10千欧姆，R2=47千欧
NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
NPN/NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PEMH14 PUMH14 5C H1- H1P H1T H1W |
NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open NPN/NPN配电阻型晶体管；R1=47千欧姆，R2=开
NPN/NPN resistor-equipped transistors R1 = 47 kW-ohm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTC144VE115 PDTC144VT215 PDTC144VM PDTC144VK PDTC |
PDTC144V series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Philips
NXP Semiconductors N.V.
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PEMD13 PEMD13_1 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = 47 kohm
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 47 KOHM
|
Philips Semiconductors
NXP Semiconductors
|
| PIMN31 |
50V NPN/NPN double resistor-equipped transistor
|
NXP Semiconductors
|
| PDTD114ET |
NPN resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTC124TEF |
NPN resistor-equipped transistor;
|
Philips
|
